Due to increase in demand of high-powered power electronics, we started looking into better alternative to commonly used semiconductors e.g., Silicon. It is found through research that semiconductors with bigger bandgaps can withstand high voltages thus provides us with range of new possibilities. This is why semiconductors with Ultrawide bandgap are under research to improve their useability to enable them to perform in future. In this Research Thermal Characterization of Ultra-Wide Bandgap Semiconductor devices is performed to extract the thermal properties. Thermal properties help us find the thermal pathways of a UWBG device using FEA. Using TTR we can accurately measure the device active layer temperature. Efficient thermal management system will be developed to counter the high heat generation while operating at high voltages.